Deposition and characterization of lithium doped direct current magnetron sputtered <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si2.svg"><mml:mrow><mml:mi>C</mml:mi><mml:msub><mml:mi>u</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mi>O</mml:mi></mml:mrow></mml:math> films

• Preparation of Li doped Cu2O films by reactive magnetron sputtering. High optical transmittance and phase purity in highly films. acceptor density correlated with high doping concentrations. Lithium cuprous oxide ( C u 2 O : L i ) were deposited on quartz substrates direct current co-sputtering copper targets. X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrometry, UV-VIS transmittance, room temperature Hall measurements have been conducted to characterize the SIMS revealed concentrations range × 10 18 − 5 20 c m 3 XRD confirms pure for all The concentration correlates an increased free carrier found from effect measurements. highest results low resistivity 4 Ω p-type up 17 .